Working on behalf of a leading maker of wireless chipsets, reference designs and RF Front ends. Over the past several years, they have developed the 360 Smartphone RF front end chipset, based on Silicon CMOS technology.
Now, they are starting a major R&D effort, looking at GaAs HBT device types for Smartphone PAs. As the leading Smartphone reference design OEM, they have a huge commercial advantage, as they have a captive customer.
They are looking for a GaAs HBT Process Integration Engineer, who fully understands GaAs HBT Device and Process technology, and will ensure that PA and RF Front End Designs are optimized with all device and process limitations and risks accounted for. Need strong background in GaAs HBT Device physics and Process engineering, good design insight into PA, Tuner, LNA and Switch design.. Should have a broad process background (ie Process integration), with knowledge of statistical tools, and how to mine data,and use to drive yield and reliability higher. Need MS or better in EE, Physics, 2 to 10+ years’ experience.